Nelson Tansu: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Investigation of fast and slow decays in InGaN/GaN quantum wells

Sun, Guan, Xu, Guibao, Ding, Yujie J., Zhao, Hongping, Liu, Guangyu, Zhang, Jing, Tansu, Nelson

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 780 KB

english, 2011

2

III-Nitride Photonics

Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, Li, Xiao-Hang, Zhang, Jing, Tong, Hua, Ee, Yik-Khoon

Journal:

IEEE Photonics Journal

Year:

2010

Language:

english

File:

PDF, 234 KB

english, 2010

3

Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

Zhao, Hongping, Liu, Guangyu, Zhang, Jing, Arif, Ronald A., Tansu, Nelson

Journal:

Journal of Display Technology

Year:

2013

Language:

english

File:

PDF, 3.47 MB

english, 2013

4

Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers

Jing Zhang,, Tansu, Nelson

Journal:

IEEE Photonics Journal

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

5

Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well

Lifang Xu,, Patel, D., Menoni, C. S., Jeng-Ya Yeh,, Mawst, L. J., Tansu, Nelson

Journal:

IEEE Photonics Journal

Year:

2012

Language:

english

File:

PDF, 765 KB

english, 2012

6

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Physics and Simulation of Optoelectronic Devices XV - Quantum 3D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum-dot nanostructures

Ee, Yik-Khoon, Gupta, Yush P., Arif, Ronald A., Tansu, Nelson, Osinski, Marek, Henneberger, Fritz, Arakawa, Yasuhiko

Year:

2007

Language:

english

File:

PDF, 285 KB

english, 2007

7

Effect of packing density and packing geometry on light extraction of III-nitride light-emitting diodes with microsphere arrays

Zhu, Peifen, Tansu, Nelson

Journal:

Photonics Research

Year:

2015

Language:

english

File:

PDF, 1.07 MB

english, 2015

8

Moisture dependent wear mechanisms of gallium nitride

Zeng, Guosong, Tansu, Nelson, Krick, Brandon A.

Journal:

Tribology International

Year:

2018

Language:

english

File:

PDF, 10.32 MB

english, 2018

9

Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear

Zeng, Guosong, Sun, Wei, Song, Renbo, Tansu, Nelson, Krick, Brandon A.

Journal:

Scientific Reports

Year:

2018

Language:

english

File:

PDF, 653 KB

english, 2018

10

[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys

Goodrich, Justin C., Borovac, Damir, Tan, Chee-Keong, Tansu, Nelson

Year:

2018

File:

PDF, 6 KB

2018

11

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Wierer, Jonathan J., Tansu, Nelson

Journal:

Laser & Photonics Reviews

Year:

2019

Language:

english

File:

PDF, 1.16 MB

english, 2019

12

Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness

Sun, Wei, Kim, Honghyuk, Mawst, Luke J., Tansu, Nelson

Journal:

Journal of Crystal Growth

Year:

2020

Language:

english

File:

PDF, 1.90 MB

english, 2020

13

Electronic properties of dilute-As InGaNAs alloys: A first-principles study

Borovac, Damir, Sun, Wei, Tan, Chee-Keong, Tansu, Nelson

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 1.41 MB

english, 2020

14

A Review on the Development of Tunable Graphene Nanoantennas for Terahertz Optoelectronic and Plasmonic Applications

Ullah, Zaka, Witjaksono, Gunawan, Nawi, Illani, Tansu, Nelson, Irfan Khattak, Muhammad, Junaid, Muhammad

Journal:

Year:

2020

File:

PDF, 12.16 MB

2020

15

Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Al Muyeed, Syed Ahmed, Wei, Xiongliang, Borovac, Damir, Song, Renbo, Tansu, Nelson, Wierer, Jonathan J.

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 2.06 MB

2020

16

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

Borovac, Damir, Sun, Wei, Peart, Matthew R., Song, Renbo, Wierer, Jonathan J., Tansu, Nelson

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 2.70 MB

2020

17

Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime

Jeng-Ya Yeh, Luke J. Mawst, Nelson Tansu

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 336 KB

english, 2004

18

Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

Yik-Khoon Ee, Hongping Zhao, Ronald A. Arif, Muhammad Jamil, Nelson Tansu

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 1.12 MB

english, 2008

19

Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE

Muhammad Jamil, Hongping Zhao, John B. Higgins, Nelson Tansu

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 1.71 MB

english, 2008

20

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

Yik-Khoon Ee, Xiao-Hang Li, Jeff Biser, Wanjun Cao, Helen M. Chan, Richard P. Vinci, Nelson Tansu

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 819 KB

english, 2010

21

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Guangyu Liu, Hongping Zhao, Jing Zhang, Joo Hyung Park, Luke J Mawst, Nelson Tansu

Journal:

Nanoscale Research Letters

Year:

2011

Language:

english

File:

PDF, 1.73 MB

english, 2011

22

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

Muhammad Jamil, Ronald A. Arif, Yik-Khoon Ee, Hua Tong, John B. Higgins, Nelson Tansu

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 6.11 MB

english, 2008

23

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 294 KB

english, 2008

24

MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode

Muhammad Jamil, Hongping Zhao, John B. Higgins, Nelson Tansu

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 306 KB

english, 2008

25

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500

Hongping Zhao, Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu

Journal:

Optical and Quantum Electronics

Year:

2008

Language:

english

File:

PDF, 336 KB

english, 2008

26

Effects of growth pause on the structural and optical properties of InGaAsN–InGaAsP quantum well

Jeng-Ya Yeh, Nelson Tansu, Luke J. Mawst

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 350 KB

english, 2004

27

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao, Guangyu Liu, Ronald A. Arif, Nelson Tansu

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 783 KB

english, 2010

28

Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array

Won Hoe Koo, Wooram Youn, Peifen Zhu, Xiao-Hang Li, Nelson Tansu, Franky So

Journal:

Advanced Functional Materials

Year:

2012

Language:

english

File:

PDF, 2.57 MB

english, 2012

29

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures

Ee, Yik-Khoon, Kumnorkaew, Pisist, Arif, Ronald A., Tong, Hua, Gilchrist, James F., Tansu, Nelson

Journal:

Year:

2009

Language:

english

File:

PDF, 1.65 MB

english, 2009

30

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Zhao, Hongping, Liu, Guangyu, Zhang, Jing, Poplawsky, Jonathan D., Dierolf, Volkmar, Tansu, Nelson

Journal:

Year:

2011

Language:

english

File:

PDF, 1.43 MB

english, 2011

31

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

Tansu, Nelson, Zhao, Hongping, Zhang, Jing, Liu, Guangyu, Li, Xiao-Hang, Ee, Yik-Khoon, Song, Renbo, Toma, Takahiro, Zhao, Le, Huang, G. S., Streubel, Klaus P., Jeon, Heonsu, Tu, Li-Wei, Linder, Norbe

Year:

2011

Language:

english

File:

PDF, 373 KB

english, 2011

32

Light Extraction: Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array (Adv. Funct. Mater. 16/2012)

Won Hoe Koo, Wooram Youn, Peifen Zhu, Xiao-Hang Li, Nelson Tansu, Franky So

Journal:

Advanced Functional Materials

Year:

2012

File:

PDF, 1.66 MB

2012

33

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Guangyu Liu, Jing Zhang, Xiao-Hang Li, G.S. Huang, Tanya Paskova, Keith R. Evans, Hongping Zhao, Nelson Tansu

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 2.72 MB

english, 2012

34

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

Arif, Ronald A., Ee, Yik-Khoon, Tansu, Nelson

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 655 KB

english, 2007

35

Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

Tansu, Nelson, Yeh, Jeng-Ya, Mawst, Luke J.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 471 KB

english, 2003

36

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Zhao, Hongping, Liu, Guangyu, Tansu, Nelson

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 467 KB

english, 2010

37

Current injection efficiency of InGaAsN quantum-well lasers

Tansu, Nelson, Mawst, Luke J.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 1.67 MB

english, 2005

38

Investigation of large Stark shifts in InGaN/GaN multiple quantum wells

Xu, Guibao, Sun, Guan, Ding, Yujie J., Zhao, Hongping, Liu, Guangyu, Zhang, Jing, Tansu, Nelson

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.00 MB

english, 2013

39

P-110: Light extraction of Phosphorescent OLEDs by Defective Hexagonal-Close-Packed Array

Wonhoe Koo, Wooram Yun, Peifen Zhu, Xiao-Hang Li, Nelson Tansu, Franky So

Journal:

SID Symposium Digest of Technical Papers

Year:

2012

Language:

english

File:

PDF, 200 KB

english, 2012

40

Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents

Zhang, Jing, Tong, Hua, Liu, Guangyu, Herbsommer, Juan A., Huang, G. S., Tansu, Nelson

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.31 MB

english, 2011

41

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Zhang, Jing, Tansu, Nelson

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.51 MB

english, 2011

42

Optical gain characteristics of staggered InGaN quantum wells lasers

Zhao, Hongping, Tansu, Nelson

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 647 KB

english, 2010

43

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Novel In-Plane Semiconductor Lasers X - Gain characteristics of deep UV AlGaN quantum wells lasers

Zhang, Jing, Zhao, Hongping, Tansu, Nelson, Belyanin, Alexey A., Smowton, Peter M.

Year:

2011

Language:

english

File:

PDF, 285 KB

english, 2011

44

Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Liu, Guangyu, Zhang, Jing, Zhao, Hongping, Tansu, Nelson

Year:

2012

Language:

english

File:

PDF, 394 KB

english, 2012

45

Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO[sub 2]/polystyrene microlens arrays

Ee, Yik-Khoon, Arif, Ronald A., Tansu, Nelson, Kumnorkaew, Pisist, Gilchrist, James F.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 689 KB

english, 2007

46

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Physics and Simulation of Optoelectronic Devices XV - Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime

Arif, Ronald A., Tummidi, Ravi S., Ee, Yik Khoon, Tansu, Nelson, Osinski, Marek, Henneberger, Fritz, Arakawa, Yasuhiko

Year:

2007

Language:

english

File:

PDF, 288 KB

english, 2007

47

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Physics and Simulation of Optoelectronic Devices XVI - Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Zhao, Hongping, Arif, Ronald A., Ee, Yik Khoon, Tansu, Nelson, Osinski, Marek, Henneberger, Fritz, Edamatsu, Keiichi

Year:

2008

Language:

english

File:

PDF, 447 KB

english, 2008

48

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Physics and Simulation of Optoelectronic Devices XVIII - Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Liu, Guangyu, Zhao, Hongping, Tansu, Nelson, Witzigmann, Bernd, Henneberger, Fritz, Arakawa, Yasuhiko, Osinski, Marek

Year:

2010

Language:

english

File:

PDF, 513 KB

english, 2010

49

Investigation of the Deposition of Microsphere Monolayers for Fabrication of Microlens Arrays

Kumnorkaew, Pisist, Ee, Yik-Khoon, Tansu, Nelson, Gilchrist, James F.

Journal:

Year:

2008

Language:

english

File:

PDF, 2.37 MB

english, 2008

50

First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

Tan, Chee-Keong, Zhang, Jing, Li, Xiao-Hang, Liu, Guangyu, Tayo, Benjamin O., Tansu, Nelson

Journal:

Journal of Display Technology

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013